atp213 no. a1526-1/7 1 : gate 2 : drain 3 : source 4 : drain sanyo : atpa k 0.7 0.4 0.55 9.5 7.3 0.5 1.7 4.6 6.05 13 2 6.5 0.6 4 0.8 0.5 1.5 0.4 2.6 4.6 0.4 0.1 2.3 2.3 ATP213-TL-H features ? low on-resistance ? large current ? 4v drive ? slim package ? halogen free compliance ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 60 v gate-to-source voltage v gss 20 v drain current (dc) i d 50 a drain current (pw 10 s) i dp pw 10 s, duty cycle 1% 150 a allowable power dissipation p d tc=25 c50w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 37 mj avalanche current *2 i av 25 a note : * 1 v dd =10v, l=100 h, i av =25a * 2 l 100 h, single pulse package dimensions unit : mm (typ) 7057-001 ordering number : ena1526a 62012 tkim/80509pa tk im tc-00002021 atp213 n-channel silicon mosfet general-purpose switching device applications http:// semicon.sanyo.com/en/network product & package information ? package : atpak ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type: tl marking electrical connection tl atp213 lot no. 1 3 2,4 sanyo semiconductors data sheet
atp213 no. a1526-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 60 v zero-gate voltage drain current i dss v ds = 60 v, v gs =0v 1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance | yfs | v ds =10v, i d = 25 a 55 s static drain-to-source on-state resistance r ds (on)1 i d = 25 a, v gs =10v 12 16 m r ds (on)2 i d = 13 a, v gs =4.5v 15 21 m r ds (on)3 i d = 7 a, v gs =4v 17 26 m input capacitance ciss v ds =20v, f=1mhz 3150 pf output capacitance coss 310 pf reverse transfer capacitance crss 190 pf turn-on delay time t d (on) see speci ed test circuit. 23 ns rise time t r 170 ns turn-off delay time t d (off) 230 ns fall time t f 150 ns total gate charge qg v ds =30v, v gs =10v, i d =50a 58 nc gate-to-source charge qgs 10.5 nc gate-to-drain ?miller? charge qgd 12.5 nc diode forward voltage v sd i s =50a, v gs =0v 1.01 1.2 v switching time test circuit ordering information device package shipping memo ATP213-TL-H atpak 3,000pcs./reel pb free and halogen free pw=10 s d.c. 1% p. g 50 g s d i d =25a r l =1.2 v dd =30v v out atp213 v in 10v 0v v in
atp213 no. a1526-3/7 r ds (on) -- v gs r ds (on) -- tc i d -- v ds i d -- v gs i s -- v sd sw time -- i d drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a gate-to-source voltage, v gs -- v case temperature, tc -- c static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m drain current, i d -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v source current, i s -- a | y fs | -- i d forward transfer admittance, | y fs | -- s ciss, coss, crss -- v ds 060 20 30 40 50 10 it14844 it14843 it14842 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.001 0.01 7 5 3 2 it14841 25 c -- 2 5 c f=1mhz coss crss tc=75 c 0.1 1.0 2 23 5 23 57 10 357 100 7 5 100 10 3 2 5 7 3 2 5 7 0.1 1.0 23 57 7 23 5 100 v dd =30v v gs =10v t d (off) t f t d (on) t r it14839 it14840 1 5 40 16 24 36 589 71012 11 --50 --25 0 25 50 75 100 125 150 14 15 13 35 25 30 10 20 15 0 35 30 25 20 15 10 5 i d =7a 25a it14837 it14838 0 5.0 1.5 0 0 50 25 5 15 20 45 35 40 30 10 2.0 0.2 0.6 1.2 0.4 0.8 1.6 1.4 1.0 1.8 0 75 65 50 55 70 60 45 3.0 4.5 1.0 2.5 4.0 0.5 2.0 3.5 40 35 15 30 5 10 25 20 4.5v v gs =3.0v --25 c 25 c tc=75 c 2 0.1 7 5 3 2 10 23 57 16.0v ciss 8.0v 10.0v v gs =4.0v, i d =7a v gs =10.0v, i d =25a tc= --25 c 75 c 25 c 1.0 7 5 7 3 2 10 100 7 5 3 2 1.0 7 5 3 2 10 7 5 3 2 100 7 5 3 75 c 25 c tc= --25 c 100 1000 7 5 7 7 5 3 2 3 2 3.5v 4.0v 6.0v 13a v gs =4.5v, i d =13a tc=25 c single pulse v ds =10v single pulse single pulse tc=25 c single pulse v ds =10v single pulse v gs =0v single pulse
atp213 no. a1526-4/7 v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v e as -- ta avalanche energy derating factor -- % ambient temperature, ta -- c 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 it10478 a s o p d -- tc drain-to-source voltage, v ds -- v drain current, i d -- a case temperature, tc -- c allowable power dissipation, p d -- w it14846 it14845 0 0 1 2 3 4 5 6 7 8 60 10 20 30 40 50 10 9 v ds =30v i d =50a it14847 2 3 2 5 3 7 2 0.1 1.0 3 5 7 2 10 2 23 57 23 57 0.1 1.0 357 10 100 operation in this area is limited by r ds (on). 10 s 100 s i d =50a i dp =150a dc operation 1ms 10ms 100ms 3 5 7 100 0 0 0 20 40 60 10 30 40 50 20 80 100 120 60 140 160 pw 10 s tc=25 c single pulse
atp213 no. a1526-5/7 taping speci cation ATP213-TL-H
atp213 no. a1526-6/7 outline drawing land pattern example ATP213-TL-H mass (g) unit 0.266 * for reference mm unit: mm 6.5 6.7 1.6 2 2.3 2.3 1.5
atp213 no. a1526-7/7 ps this catalog provides information as of june, 2012. speci cations and information herein are subject to change without notice. note on usage : since the atp213 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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